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UPPCL EE :Analog Electronics Quiz 3
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Question 1
In BJT biasing, α is the common-base, short-circuit, amplification factor; and β is the common-emitter, forward current, amplification factor. Determine the relationship between α and β.
Question 2
Which of the following statement is incorrect with respect to BJT and JFET transistors?
Question 3
In a BJT switching circuit, supply voltage is VCC = 9 V, biasing resistors are RB = 15 kΩ, RC = 6.8 kΩ and the transistor has an hFE value of 25. What is the minimum input voltage required to switch the transistor into saturation when VCE = 0.2 V?
Question 4
The purpose of emitter bypass capacitor in a CE BJT amplifier is to
Question 5
The stability factor ‘S’ in BJT.
Question 6
For the BJT at 300K temperature, early voltage measured is 100 V. Then intrinsic gain of BJT in (kV/V) is:
Question 7
Thermal run-away is not possible in FET because, as the temperature of FET increases
Question 8
Consider the FET amplifier in the fig. for these
Vt = 2 V
VGS = 4 V
Find the current DC current ID (assuming FET is saturation)
Question 9
While biasing JFET if drain and source are interchanged, then
Question 10
Which of the following statements is true for an nMOS FET
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AE & JE ExamsSep 16AE & JE Exams
