UPPCL AE EE : Basic Electronics Quiz 2

For CE BJT amplifier, high frequency response is limited by

Which of the following can act as a negative resistance device?

1. UJT

2. GTO

3. DIAC

For the BJT circuit shown below, find the minimum value of base current assuming the BJT to be in saturation.

For a BJT, under the saturation condition

If an n-channel E-MOSFET has and the over drive voltage required to operate the MOSFET in saturation region is 4V, then the drain current produced by the E-MOSFET is

Consider following statement NOT true in respect of IGBT.

In a Si PNP – transistor, hole current in the emitter region is 11.6 mA and electron current in the emitter region is 0.57  The emitter junction efficiency is approximately.