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UPPCL AE EE : Basic Electronics Quiz 1
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Question 1
Resistivity of a semiconductor depends on
Question 2Multiple Correct Options
In a Si-semiconductor material doped with X-type material. The energy band diagram of that semiconductor material is a follows:
Which of the following correct?
Question 3
The conductivity of a semiconductor crystal due to any current carrier is NOT proportional to
Question 4
The leakage current in a semiconductor diode is:
1. Due to minority carriers.
2. Due to majority carriers.
3. Less in silicon diodes as compare to germanium diode.
4. Less in germanium diode as compare to silicon diode.
The correct statement are:
Question 5
A Schottky diode is a :
Question 6
Match List-I (Semiconductor Property) with List-II (Corresponding Unit) and select the correct answer using the code given below the lists:
List-I
A) Carrier mobility
B) Diffusion length
C) Diffusion
D) Energy gap
List-II
1) eV(electron volt)
2) M2/v-sec
3) m Coefficient
4) M2/s
List-I
A) Carrier mobility
B) Diffusion length
C) Diffusion
D) Energy gap
List-II
1) eV(electron volt)
2) M2/v-sec
3) m Coefficient
4) M2/s
Question 7
Material used for fabrication of Tunnel diode is
Question 8
The current density of n-type germanium is 120 A/m2 and the resistivity is 0.4 Ωm. Find the drift velocity (in m/s) if the mobility of electron is 0.6 m2/V-sec?
Question 9
The electron concentration in silicon at T = 300 K is 6 × 104 cm–3. If the intrinsic carrier concentration for silicon at 300 K is 1.8 × 1010 cm–3, then find the hole concentration (in cm–3) in silicon?
Question 10
A semiconductor material has electron mobility is 9 times of hole mobility. When conductivity is minimum, the hole concentration is
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AE & JE ExamsMar 29AE & JE Exams
