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SSC JE EE: Basic Electronics Booster quiz-6
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Question 1
A Schottky diode is: -
Question 2
Which of the following is/are NOT correct for Darlington pair?
(i) A Darlington pair is a two-transistor circuit with the emitter of one transistor connected to the base of other transistor, while both collector are connected to common terminal.
(ii) It has low current gain β
(iii) It has high input impedance and low output impedance.
Question 3
In forward region of its characteristics, a diode appears as: -
Question 4
The magnitude of the threshold voltage VT for enhancement MOSFET is of the order of:
Question 5
For an op-amp based standard RC phase shift oscillator, the frequency of oscillations is:
Question 6
For highest power gain, one would use ………………. configuration.
Question 7
In a p-type Si sample, the hole concentration is 6.25 × 1015 /cm3. The intrinsic carrier concentration is 2.5 × 1010/cm3, then the electron concentration is
Question 8
Calculate drain current for a depletion type mosfet if IDSS is 10 mA, VGS = –1V, VP = –5V.
Question 9
The input gate current of FET is:
Question 10
The ripple factor of the output signal of an ideal full-wave bridge rectifier with a sinusoidal signal as input is equal to
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AE & JE ExamsDec 7AE & JE Exams