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SSC JE EE: Basic Electronics Booster quiz-6

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Question 1

A Schottky diode is: -

Question 2

Which of the following is/are NOT correct for Darlington pair?

(i) A Darlington pair is a two-transistor circuit with the emitter of one transistor connected to the base of other transistor, while both collector are connected to common terminal.

(ii) It has low current gain β

(iii) It has high input impedance and low output impedance.

Question 3

In forward region of its characteristics, a diode appears as: -

Question 4

The magnitude of the threshold voltage VT for enhancement MOSFET is of the order of:

Question 5

For an op-amp based standard RC phase shift oscillator, the frequency of oscillations is:

Question 6

For highest power gain, one would use ………………. configuration.

Question 7

In a p-type Si sample, the hole concentration is 6.25 × 1015 /cm3. The intrinsic carrier concentration is 2.5 × 1010/cm3, then the electron concentration is

Question 8

Calculate drain current for a depletion type mosfet if IDSS is 10 mA, VGS = –1V, VP = –5V.

Question 9

The input gate current of FET is:

Question 10

The ripple factor of the output signal of an ideal full-wave bridge rectifier with a sinusoidal signal as input is equal to
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Dec 7AE & JE Exams