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SSC JE EE Quiz: Basic Electronics Booster quiz-17

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Question 1

In a uniformly doped BJT, assume that N_E, N_B and N_C are the emitter, base and collector doping in atoms/cm³, respectively. If the emitter injection efficiency of the BJT is close to unity, which one of the following condition is true

Question 2

In a semiconductor, movement of charge carriers under the influence of an electric field is called as

Question 3

The extremely high input impedance of a MOSFET is primarily due to the

Question 4

Fermi level for n-type semiconductors lies-

Question 5

Which type of gain is achieved using CB configuration

Question 6

The value of voltage across diode as shown in figure

Question 7

When an electron breaks a covalent bond, and moves away, then what will happen?

Question 8

With a half-wave rectifier current across the load resistor flows for how much part of a cycle ?

Question 9

For normal operation of a transistor, the collector -base junction is

Question 10

The input offset voltage is

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