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SSC JE EE Quiz: Basic Electronics Booster quiz-16

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Question 1

what is the expression for hole concentration for minimum conductivity of a semiconductor sample?

Question 2

An SCR is a device having

Question 3

Which of the following is the Unipolar device ?

Question 4

In tunnel diode, the Fermi level lies

Question 5

The action of JFET in its equivalent circuit can be best represented as a

Question 6

In a properly biased N-P-N transistor, most of the electron from the emitter ______

Question 7

Thermal runaway occurs when,

Question 8

Most of the electrons in the base of an n-p-n transistor flow……..

Question 9

Thermal runaway in a transistor biased in the active region is due to

Question 10

What is the PIV across each diode of a bridge rectifier with secondary voltage of 20 V_rms ?

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Oct 29AE & JE Exams