SSC JE EE Quiz: Basic Electronics Booster quiz-15

For a forward biased pn-junction diode, the diffusion capacitance varies as

Thermal runaway is not possible in FET because as temperature of FET increases

A transistor has β = 105 and I_C = 840 μA . What is the value of I_B?

Consider the following statements :

1) In the forward bias region, the characteristics of a Si diode shift to the left with decrease in temperature.

2) Temperature dependence of reverse breakdown voltage of the Zener potential.

3) In the reverse bias region, the characteristic shift downward with decrease in temperature.

Which of the above statements are correct?

Which one of the following consists of a layer of metal at the top named gate, a silicon dioxide layer below it, and a semiconductor substrate as the bottom-most layer?