What are the majority charge carriers in n-type semiconductors?
Which of the following is NOT a characteristic of Schottky Diode?
As compared to a full wave rectifier using 2 diodes, the four diode bridge rectifier has the dominant advantage of
Consider the following circuit:
If the values of R and C is doubled, then magnitude of voltage gain is 
will be
What is the region of operation of the bipolar junction transistor (BJT), where both the junction are forward biased?
For a PN junction diode, width of space charge region increase as?
Which one of the following device exhibits “negative resistance” property?
Which among the following statements are true regarding “avalanche” and “zener” breakdown?
1) For avalanche breakdown, electron hole pairs are responsible but for Zener breakdown, only electrons are responsible.
2) The Avalanche breakdown voltage has positive temperature coefficient and Zener breakdown voltage has negative temperature coefficient.
3) Junction is completely destroyed in avalanche breakdown but not in Zener breakdown.
4) In avalanche breakdown, breakdown voltage is inversely proportional to temperature and in Zener breakdown, it is proportional to temperature.
Consider the following statements:
(1) The β of a bipolar transistor is reduces if the base width is increased.
(2) The β of a bipolar transistor increases if the doping concentration in the base is increased.
Which of the above statements is/are correct?
The expression for the transconductance for JFET is given by:
