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Solution of EDC Live Session

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Question 1

A thin P-type silicon sample is uniformly illuminated with light which generates excess carriers. The recombination rate is directly proportional to

Question 2

If P is Passivation, Q is n–well implant, R is metallization and S is source/drain diffusion, then the order in which they are carried out in a standard n–well CMOS fabrication process, is

Question 3

In a Silicon Controlled Rectifier, the value of current above which it switches from the conduction state to forward blocking state is called ________.

Question 4

Consider a GaAs sample at T=300 K. Let the Hall effect device is fabricated with the following geometry: d = 0.01cm, W = 0.05 cm and L = 0.5 cm. The electrical parameters are : I_x = 2.5 mA, V_x =2.2 V and Bz = 2.5 × 10^-2 tesla. The hall voltage is V_H = -4.5 mV. What will be the resistivity of the sample?

Question 5

Two GaAs wafers, one n-type and one p-type, are uniformly doped such that N_D (wafer 1) = N_A (wafer 2) ≥ n_i , which wafer will exhibit the larger resistivity?

Question 6

If for a P-Channel JFET, we have I_DSS= 30mA, V_GS= 10V and V_GS(off)= 20V, then determine what value of resistance 'R_s' is required in order to satisfy self-biasing method for JFET ?

Question 7

The theoretical efficiency of a class D amplifier is _______________.

Question 8

A battery of 3 volts is applied across a 1 cm long semiconductor bar. The average electron drift velocity is 10⁴ cm/sec. Then the electron mobility is

Question 9

The figure shows the band diagram of a Metal Oxide Semiconductor (MOS). The surface region of this MOS is in

Question 10

The equation

(where n₀ and p₀ are the concentrations of the n – type and p – type carries in a given semiconductor and n_i is the intrinsic carrier concentration) is valid under

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ESE & GATE EC Electronic Devices and Circuits

Jun 7ESE & GATE EC