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# GATE EC 2022: National Champion Quiz 3

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Question 1

In a transistor 98.6 % of the carriers injected into the base cross the collector-base junction. If the leakage current is 6μA and collector current is 18 mA. Then the emitter current(in mA) is

Question 2

Which of the following statements concerning IC fabrication is not correct?

Question 3

Assuming V

_{CEsat}= 0.2 V and β = 50, the minimum base current (I_{B}) required to drive the transistor in figure to saturation is?Question 4

Two GaAs wafers, one n-type and one p-type, are uniformly doped such that N

_{D}(wafer 1) = N_{A}(wafer 2) ≥ n_{i}, which wafer will exhibit the larger resistivity?Question 5

For a silicon diode with long P and N regions, the accepter and donor impurity concentrations are 1 x 10

^{17}cm^{–3}and 1 × 10^{15}cm^{–3}, respectively. The lifetimes of electrons in P region and holes in N region are both 100 µs. The electron and hole diffusion coefficients are 49 cm^{2}/s and 36 cm^{2}/s, respectively. Assume kT/q = 26 mV, the intrinsic earner concentration is 1× 10^{10}cm^{–3}, and q = 1.6 × 10^{–19}C. When a forward voltage of 208 mV is applied across the diode, the hole current density (in nA/cm^{2}) injected from P region to N region is ______.Question 6

The electron concentration in a sample of uniformly doped n-type silicon at 300 K varies linearly from 10

^{17}/cm^{3}to at x = 0 to 6 × 10^{16}/cm^{3}at x = 2 µm. Assume a situation that electrons are supplied to keep this concentration gradient constant with time. If the electronic charge is 1.6 × 10^{-19 }coulomb and the diffusion constant D_{n}= 35 cm^{2}/s, the current density in the silicon if no electric field is present?Question 7

A silicon diode, with N

_{A}=10^{17 }cm^{-3}and N_{D}= 5 × 10^{17}cm^{-3}, is forward biased with V_{a}= 0.05 V. Assume that the intrinsic concentration of silicon is n_{i}= 1.08 ×10^{10}cm^{-3}. What are the minority carrier concentrations ∆n_{p}(x_{p}) and ∆ p_{n}(x_{n}) at the edge of transition region?Question 8

The transistor in the circuit shown below has the parameter mA/V

The value of C

^{2}. V_{T}= -2 V, drain current = 0.5 mA.(neglect channel length modulation)The value of C

_{C}such that the lower 3 dB frequency is 20 Hz isQuestion 9

The built-in potential of an abrupt p-n junction is 0.75 V. If its junction capacitance (Q) at a reverse bias (V

_{R}) of 1.25 V is 5 pF, the value of C_{J}(in pF) when V_{R}= 7.25 V is________.Question 10

Parameters of transistors are given, The width to-length ratio of M

_{2}is if =0.10 V when then for M_{1}isQuestion 11

If a n-channel MOSFET is operating under saturation region with and then intrinsic gain of MOSFET will be ________.

Question 12

The breakdown in a Bipolar Transistor is characterized by two parameters, breakdown voltage with base open (BV

_{CBO}) and breakdown voltage with emitter open (BV_{CEO}). Which one of the following is true?- 97 attempts
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