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GATE EC 2022: Electronic Devices Quiz 8

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Question 1

Which of the following is true?

Question 2

In Avalanche photo diode assume the saturation velocity of the charge carriers generated by impact ionization by photon absorbtion be equal to 107 cm/sec in a depletion region that is 10Description: E:\Gate\Gate-EC\03_Elctro-Devic_B-done_files\image002.pngm wider then the transition time will be

Question 3

If P is Passivation, Q is n–well implant, R is metallization and S is source/drain diffusion, then the order in which they are carried out in a standard n–well CMOS fabrication process, is

Question 4

Match List – 1 (Fabrication step in IC) with List – 2 (Related characteristic/Reason) and select the correct answer using the codes given below the lists:

Question 5

There are two photolithography systems: one with light source of wavelength λ1 = 156 nm (System 1) and another with a light source of wavelength λ2 = 325 nm (System 2). Both photolithography systems are otherwise identical. If the minimum feature sizes that can be realized using System 1 and System 2 are Lmin1 and Lmin2 respectively, the ratio Lmin1/Lmin2 (correct to two decimal places) is ____________.

Question 6

For the circuit shown below, the minimum number and the maximum number of isolation regions are respectively
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