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GATE EC 2022: Electronic Devices Quiz 3

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Question 1

A dc voltage of 10 V is applied across an n-type silicon bar having a rectangular cross-section and a length of 1 cm as shown in figure. The donor doping concentration ND and the mobility of electrons Description: Description: D:\GradeStack Courses\GATE Tests (Sent by Ravi)\GATE EC 10-Mar\GATE-ECE-2015-Paper-2_files\image299.png are 1016 cm-3 and 1000 cm2V–1s–1, respectively. The average time (in μs) taken by the electrons to move from one end of the bar to other end is__________
Description: Description: D:\GradeStack Courses\GATE Tests (Sent by Ravi)\GATE EC 10-Mar\GATE-ECE-2015-Paper-2_files\image300.png

Question 2

Under low level injection assumption, the injected minority carrier current for an extrinsic semiconductor is essentially the

Question 3

An ideal p-n junction is at T = 300 K, then n-region is doped with 1016 donor atoms per cm3. The minority carrier life times are ms and The minority carrier diffusion coeffcient are Dn = 23 cm2/s and Dp = 8 cm2/s. The forward bias voltage is Va = 0.610 V. The excess hole concentration as a function of is given as (Assume cm-3, and the depletion width to be negotiable).

Question 4

A heavily doped n − type semiconductor has the following data:
Hole-electron mobility ratio: 0.4
Doping concentration : 4.2 × 108 atoms/m3
Intrinsic concentration : 1.5 × 104 atoms/m3
The ratio of conductance of the n − type semiconductor to that of the intrinsic semiconductor of same material and at the same temperature is given by

Question 5

A gallium arsenide pn junction is operating in reverse-bias voltage VR=5 V. The doping profile are. The minority carrier life- time are . The reverse-biased generation
current density is (

Question 6

At T=300 K, an n-type silicon sample contains a donor concentration Nd = 1016 cm-3 and intrinsic concentration ni = 1.5 × 1010 cm-3 the minority carrier hole lifetime is found to be = 20 µs. What will be the thermal-equilibrium hole recombination rate in the material?
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