A dc voltage of 10 V is applied across an n-type silicon bar having a rectangular cross-section and a length of 1 cm as shown in figure. The donor doping concentration ND and the mobility of electrons are 1016 cm-3 and 1000 cm2V–1s–1, respectively. The average time (in μs) taken by the electrons to move from one end of the bar to other end is__________
An ideal p-n junction is at T = 300 K, then n-region is doped with 1016donor atoms per cm3. The minority carrier life times are ms and The minority carrier diffusion coeffcient are Dn = 23 cm2/s and Dp = 8 cm2/s. The forward bias voltage is Va = 0.610 V. The excess hole concentration as a function of is given as (Assume cm-3, and the depletion width to be negotiable).
Under low level injection assumption, the injected minority carrier current for an extrinsic semiconductor is essentially the
A heavily doped n − type semiconductor has the following data: Hole-electron mobility ratio: 0.4 Doping concentration : 4.2 × 108 atoms/m3 Intrinsic concentration : 1.5 × 104 atoms/m3 The ratio of conductance of the n − type semiconductor to that of the intrinsic semiconductor of same material and at the same temperature is given by
A gallium arsenide pn junction is operating in reverse-bias voltage VR=5 V. The doping profile are. The minority carrier life- time are. The reverse-biased generation current density is (
At T=300 K, an n-type silicon sample contains a donor concentration Nd = 1016 cm-3 and intrinsic concentration ni = 1.5 × 1010 cm-3 the minority carrier hole lifetime is found to be = 20 µs. What will be the thermal-equilibrium hole recombination rate in the material?