GATE 2025 EDC Quiz 19

The parameter for an ideal n⁺ poly-Si gated MOSFET are as follows : L=0.5 μm, w=2.5 μm, t_ox = 10 nm, and V_T= 0.5V 

The Gate voltage , V_GS, that must be applied to obtain the I_D-V_D  curve shown is ___________(V).

Consider an n⁺ polysilicon-silicon dioxide n-type silicon MOS capacitor. Let N_d = 10¹⁵ cm^-3, t_ox =, and . What will be the flat-band voltage? If

In an n-channel MOSFET , drain is shorted to the gate so that V_GS = V_DS.  And V_T =1V. If the drain current I_D is 1 mA for V_GS =2V then for V_GS =3V, I_D  (in mA) is

For a n – channel enhancement MOSFET the parameter are V_TN = .8V, k_n = 5 mA/V², V_GS = 2V. If the transistor is biased in saturation region with I_o = 1 mA . The required  is

Choose the correct answer for the given low-frequency capacitance versus gate voltage characteristics of MOS-capacitor.