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GATE 2025 EDC Quiz 17

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Question 1

A dc voltage of 10 V is applied across an n-type silicon bar having a rectangular cross-section and a length of 1 cm as shown in figure. The donor doping concentration N_D and the mobility of electrons $Description: Description: D:\GradeStack Courses\GATE Tests (Sent by Ravi)\GATE EC 10-Mar\GATE-ECE-2015-Paper-2_files\image299.png$ are 10¹⁶ cm^-3 and 1000 cm²V^–1s^–1, respectively. The average time (in μs) taken by the electrons to move from one end of the bar to other end is__________
$Description: Description: D:\GradeStack Courses\GATE Tests (Sent by Ravi)\GATE EC 10-Mar\GATE-ECE-2015-Paper-2_files\image300.png$

Question 2

An ideal p-n junction is at T = 300 K, then n-region is doped with 10¹⁶ donor atoms per cm³. The minority carrier life times are

ms and

The minority carrier diffusion coeffcient are D_n = 23 cm²/s and D_p = 8 cm²/s. The forward bias voltage is V_a = 0.610 V. The excess hole concentration as a function of

is given as (Assume

cm^-3, and the depletion width to be negotiable).

Question 3

Under low level injection assumption, the injected minority carrier current for an extrinsic semiconductor is essentially the

Question 4

A heavily doped n − type semiconductor has the following data:
Hole-electron mobility ratio: 0.4
Doping concentration : 4.2 × 10⁸ atoms/m³
Intrinsic concentration : 1.5 × 10⁴ atoms/m³
The ratio of conductance of the n − type semiconductor to that of the intrinsic semiconductor of same material and at the same temperature is given by

Question 5

A gallium arsenide pn junction is operating in reverse-bias voltage V_R=5 V. The doping profile are

. The minority carrier life- time are

. The reverse-biased generation
current density is (

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ESE & GATE EC Electronic Devices and Circuits

Nov 29ESE & GATE EC