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GATE 2024 Subject Name Foundation Quiz 81

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Question 1

In an n-channel MOSFET , drain is shorted to the gate so that VGS = VDS.  And V=1V. If the drain current ID is 1 mA for VGS =2V then for VGS =3V, ID  (in mA) is

Question 2

Consider an n+ polysilicon-silicon dioxide n-type silicon MOS capacitor. Let Nd = 1015 cm-3, tox =, and . What will be the flat-band voltage? If

Question 3

The E-MOSFET is normally-off MOSFET when:

Question 4

For the below circuit MOSFET has , VT = 0.8 V which of the following value of RD is possible such that MOSFET operates in saturation region.

Question 5

The current in an enhancement mode NMOS transistor biased in saturation mode was measured to be 1 mA at a drain-source voltage of 5 V. When the drain-source voltage was increased to 6V while keeping gate-source voltage same, the drain current increased to 1.02 mA. Assume that drain to source saturation voltage is much smaller than the applied drain-source voltage. The channel length modulation parameter (in V–1) is ____.
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