GATE 2024 Subject Name Foundation Quiz 81

In an n-channel MOSFET , drain is shorted to the gate so that V_GS = V_DS.  And V_T =1V. If the drain current I_D is 1 mA for V_GS =2V then for V_GS =3V, I_D  (in mA) is

Consider an n⁺ polysilicon-silicon dioxide n-type silicon MOS capacitor. Let N_d = 10¹⁵ cm^-3, t_ox =, and . What will be the flat-band voltage? If

For the below circuit MOSFET has , V_T = 0.8 V which of the following value of R_D is possible such that MOSFET operates in saturation region.

The current in an enhancement mode NMOS transistor biased in saturation mode was measured to be 1 mA at a drain-source voltage of 5 V. When the drain-source voltage was increased to 6V while keeping gate-source voltage same, the drain current increased to 1.02 mA. Assume that drain to source saturation voltage is much smaller than the applied drain-source voltage. The channel length modulation parameter (in V^–1) is ____.