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GATE 2024 Subject Name Foundation Quiz 81
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In an n-channel MOSFET , drain is shorted to the gate so that VGS = VDS. And VT =1V. If the drain current ID is 1 mA for VGS =2V then for VGS =3V, ID (in mA) is
Consider an n+ polysilicon-silicon dioxide n-type silicon MOS capacitor. Let Nd = 1015 cm-3, tox =, and . What will be the flat-band voltage? If
The E-MOSFET is normally-off MOSFET when:
For the below circuit MOSFET has , VT = 0.8 V which of the following value of RD is possible such that MOSFET operates in saturation region.
The current in an enhancement mode NMOS transistor biased in saturation mode was measured to be 1 mA at a drain-source voltage of 5 V. When the drain-source voltage was increased to 6V while keeping gate-source voltage same, the drain current increased to 1.02 mA. Assume that drain to source saturation voltage is much smaller than the applied drain-source voltage. The channel length modulation parameter (in V–1) is ____.
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