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# GATE 2024 Subject Name Foundation Quiz 80

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Question 1

In the circuit shown in the figure, the BJT has a current gain (β) of 50. For an emitter-base voltage VEB = 600 mV, the emitter-collector voltage VEC (in Volts) is _____. Question 2

In a BJT biased in common emitter configuration given VCB = 2 V. Doping in emitter, base & collector are 10 × 1017 / cm3, 5 × 1016 / cm3 and 2 × 1015 respectively. ni = 1.5 × 1010 / cm3 (ε = 11.7εo), the NPN BJT has base width of 0.8 μm
Find effective base width of base :

Question 3

Assuming VCEsat = 0.2 V and β = 50, the minimum base current (IB) required to drive the transistor in figure to saturation is? Question 4

Why BJT amplifiers have high gain than FET amplifiers ?

Question 5

The parameters in the base region of an npn bipolar transistor are Dn = 20 cm2/s, nB0 = 104 cm-3, xB = 1 μm, ABE = 10-4 cm2. What will be the collector current (in μA) for VBE = 0.5 V?
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