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GATE 2024 Subject Name Foundation Quiz 80

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Question 1

In the circuit shown in the figure, the BJT has a current gain (β) of 50. For an emitter-base voltage V_EB = 600 mV, the emitter-collector voltage V_EC (in Volts) is _____.
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Question 2

In a BJT biased in common emitter configuration given V_CB = 2 V. Doping in emitter, base & collector are 10 × 10¹⁷ / cm³, 5 × 10¹⁶ / cm³ and 2 × 10¹⁵ respectively. n_i = 1.5 × 10¹⁰ / cm³ (ε = 11.7εo), the NPN BJT has base width of 0.8 μm
Find effective base width of base :

Question 3

Assuming V_CEsat = 0.2 V and β = 50, the minimum base current (I_B) required to drive the transistor in figure to saturation is?

Question 4

Why BJT amplifiers have high gain than FET amplifiers ?

Question 5

The parameters in the base region of an npn bipolar transistor are D_n = 20 cm²/s, n_B0 = 10⁴ cm^-3, x_B = 1 μm, A_BE = 10^-4 cm². What will be the collector current (in μA) for VBE = 0.5 V?

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ESE & GATE EC Electronic Devices and Circuits

Jun 2ESE & GATE EC