A semiconductor sample at room temperature has intrinsic concentration of 2.5 X 1017 /m3. After doping what will be the minority carrier concentration if the majority carrier concentration is given as 5.5 X 1021 /m3.
An intrinsic semiconductor bar of Si is doped with donor type impurity to the extent of 1 atom per 108 silicon atoms, then the resistivity of silicon crystal will be (atomic density of Si crystals = 5 x 1022 atoms/cm3 and μn = 1300 cm2/V-sec)
Two exactly same semiconductors formed from materials having bandgap of1.1 eV and 0.7 eV are taken.Then the ratio of intrinsic carrier concentration Of the first semiconductor to the second one will be _____ 10-3 (assuming kT=0.026 eV).
A heavily doped n − type semiconductor has the following data: Hole-electron mobility ratio: 0.4 Doping concentration : 4.2 × 108 atoms/m3 Intrinsic concentration : 1.5 × 104 atoms/m3 The ratio of conductance of the n − type semiconductor to that of the intrinsic semiconductor of same material and at the same temperature is given by
The resistivity of a certain specimen (doped semi-conductor) is 7.86 x 10-3Ω-m, and the hall co-efficient of the same specimen is 2.83 x 10-4 m3c-1. Now determine the majority carrier mobility in cm2V-1S-1 unit.