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GATE 2024 EDC Rank Booster Quiz 18

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Question 1

In a uniformly doped BJT, assume that N_E, N_B and N_C are the emitter, base and collector dopings in atoms/cm³, respectively. If the emitter injection efficiency of the BJT is close unity, which one of the following conditions is TRUE?

Question 2

For an npn BJT transistor, how does the common-emitter current gain β depend on the relative dopings of the base region and the emitter region, N_A/N_D and the width of base W?

Question 3

in the circuit shown, the silicon BJT has β = 50, assume V_BE = 0.7 V and V_CE(sat) = 0.2 V , which one of the following statement is correct ?

Question 4

For the below BJT which of the following is true, for amplification process where BV_CB = Breakdown voltage in CB configuration

Question 5

In the circuit shown in the figure, the BJT has a current gain (β) of 50. For an emitter-base voltage V_EB = 600 mV, the emitter-collector voltage V_EC (in Volts) is _____.
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Question 6

In a BJT biased in common emitter configuration given V_CB = 2 V. Doping in emitter, base & collector are 10 × 10¹⁷ / cm³, 5 × 10¹⁶ / cm³ and 2 × 10¹⁵ respectively. n_i = 1.5 × 10¹⁰ / cm³ (ε = 11.7εo), the NPN BJT has base width of 0.8 μm
Find effective base width of base :

Question 7

The most popular configuration of BJT used is

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ESE & GATE EC Electronic Devices and Circuits

Nov 29ESE & GATE EC