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GATE 2019 National Champion Test: Electronic Devices & Circuits
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Question 1
At room temperature, a possible value for the mobility of electrons in the inversion layer of a silicon n-channel MOSFET is
Question 2
The majority carriers in an n-type semiconductor have an average drift velocity v in a direction perpendicular to a uniform magnetic field B. the electric field E induced due to Hall effect acts in the direction
Question 3
In IC technology, dry oxidation (using dry oxygen) as compared to wet oxidation (using steam or water vapor) produces
Question 4
The values of voltage (VD) across a tunnel-diode corresponding to peak and valley currents are VP and VV respectively. The range of tunnel-diode voltage VD for which the slope of its I – VD characteristics is negative would be
Question 5
Which of the following is NOT associated with a p-n junction?
Question 6
If for a silicon n-p-n transistor, the base-to-emitter voltage (VBE) is 0.7V and the collector-to-base voltage (VCB) is 0.2V, then the transistor is operating in the
Question 7
In an abrupt p-n junction, the doping concentrations on the p-side and n-side are NA = 9 X 1016 /cm3 nd ND = 1 X 1016 /cm3 respectively. The p-n junction is reverse biased and the n-side depletion width is 3μm. The depletion width on the p-side is
Question 8
The neutral base width of a bipolar transistor, biased in the active region, is 0.5 μm. the maximum electron concentration and the diffusion constant in the base are 1014/cm3 and Dn = 25 cm2/sec respectively. Assuming negligible recombination I the base, the collector current density is (the electron charge is 1.6 × 10–19 coulomb)
Question 9
In the circuit shown below, the silicon npn transistor Q has a very high value of β. The required value of R2 in k Ω to produce IC = 1 mA is
Question 10
The longest wavelength that can be absorbed by silicon, which has the bandgap of 1.12eV, is 1.1μm. If the longest wavelength that can be absorbed by another material is 0.87μm, then the bandgap of this material is
Question 11
Group I lists four types of p-n junction diodes. Match each device in Group I with one of the option in Group II to indicate the bias condition of that device in its normal mode of operation.
Question 12
When a silicon diode having a doping concentration of on p-side and on n-side is reverse biased, the total depletion width is found to be 3μm. Given that the permittivity of silicon is the depletion width on the p-side and the maximum electric field in the depletion region, respectively, are
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Jun 5ESE & GATE EC