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GATE 2019: Electronic Device& Circuits Rapid Quiz 1
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Question 1
What type of protection is provided to SCR when the snubber circuit is connected across it?
Question 2
If the doping concentration of ‘p’ and ‘n’ side of a PN-diode are 1017/cm3 and 1016/cm3 respectively, find the ratio of width of depletion region in ‘p’ side to that of ‘n’ side.
Question 3
Consider a germanium sample which is doped with donor impurities ND =5x1013 cm-3 and intrinsic carrier concentration ni =2.4x1013 cm-3 at 300°K. At thermal equilibrium minority carrier concentration in sample is ______x 1012 cm-3.
Question 4
For an ideal n-MOSFET, given parameters are
If the transistor is operating in Linear region with
, then the value of 
is given by (in mS)
If the transistor is operating in Linear region with
, then the value of is given by (in mS) Question 5
If the gain of a 3-stage amplifier is 5dB in each stage. What will be the overall gain of the amplifier (in dB)?
Question 6
Calculate conductivity and resistivity of a pure semiconductor at room temperature. Assume intrinsic concentration be 1.5 x 1010 atoms/ cm3, electron mobility be 1300 cm2/V-s and hole mobility be 500 cm2/V-s.
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Jun 10ESE & GATE EC
