Full Syllabus Test 2 for ESE & GATE EC Exams

Question 1

Which device is suitable for higher order RF frequency multiplier/

Question 2

For the given circuit, the thevenin equivalent is to be determined. The thevenin voltage, V_Th (in Volt), seen from terminal AB is __________.

Question 3

Consider the configuration shown in the figure which is a portion of a larger electrical network

For

and current

which one of the following is TRUE?

Question 4

Find the differential equation of the system described by the transfer function given as:

Question 5

The force on a point charge + q kept at a distance d from the surface of an infinite grounded metal plate in a medium of permittivity

is

Question 6

A circular loop antenna with radius r=0.60m, is operating at 2MHz. If conductivity of the wire is 57mS/m, and radius of wire is 0.2mm, then determine the radiation resistance (in

) of the antenna. (Given that: μ_r= 1)

Question 7

Express switching function f(ABC)= B'+C' in terms of min term.

Question 8

Diodes in the following circuit are ideal. Which is the correct waveform across R_L?

Question 9

In the series voltage regulator circuit shown below V_BE = 0.7 V, β = 50, V_Z = 8.3 V. The output voltage V₀ is _____ volts.

Question 10

The resolving power of a spectrometer consisting of collimator, a grating and a telescope can be increased by

Question 11

Given state diagram represents.

Question 12

For a critically damped system, rise time is defined as:

Question 13

The efficiency of Huffman code is linearly proportional to

Question 14

For an 8 feet (2.4 m) parabolic disk antenna operating at 4 GHz, the minimum distance required for far field measurement is closest to

Question 15

The longest wavelength that can be absorbed by silicon, which has the bandgap of 1.12eV, is 1.1μm. If the longest wavelength that can be absorbed by another material is 0.87μm, then the bandgap of this material is

Question 16

Consider an angle modulation signal x(t)= 10𝑐𝑜s [2𝜋 × 250 + 2 sin(400𝜋𝑡) + 4 cos(400𝜋𝑡)] V. The average power of x(t) is

Question 17

A system has 13 poles and 3 zeros, Its high frequency asymptote in the magnitude plot has a slope of

Question 18

What must be the characterstics impedance of a quarter-wave transformer if it is required to match a 400 $Description: E:\Gate\Gate-EC\04_Elctromgntic_BL-done_files\image035.png$ load with a 90 $Description: E:\Gate\Gate-EC\04_Elctromgntic_BL-done_files\image035.png$ transmission line to reduce VSWR to 1 Along the line is_____ $Description: E:\Gate\Gate-EC\04_Elctromgntic_BL-done_files\image035.png$ .

Question 19

Noise with double-sided power spectral density of K over all frequencies is passed through a RC low pass filter with 3dB cut-off frequency of f_c. The noise power at the filter output is

Question 20

In the circuit shown, zener diode has breakdown voltage equal to 3.3 volt while internal resistance of 0 Ω. The current through zener diode will be

Question 21

For good quality signal transmission all frequency components should have the same transmission delay, t_d and same phase shift

. What can be said about the statements?

Question 22

The two transistors in circuit shown below are identical. If β = 25, then the value of current will be

Question 23

As per WARC-1979 allocation, commercial communication satellites use bandwidth of

Question 24

For a two port network

and

are given by

The Y-parameters of the network are

Question 25

What are the source voltage and source resistance, respectively for the Thevenin's equivalent circuit as seen from the terminals indicated in the circuit given below ?

Question 26

Consider the following driving point impedances which are to be realized using passive elements:
1)

2)

Which of the above is/are realizable?

Question 27

The diffusion length for holes L_P, is the

Question 28

A MOSFET device has both n+-type source and drain, and the drain current flows only when gate to source voltage exceeds +2.0 V. Which of the following conclusions can be drawn about the device?
1) The device is an n-channel MOSFET
2) It is enhancement type MOSFET
3) It has threshold voltage of value + 2.0 V
4) The channel conductance is determined by hole mobility
Select the correct answer using the code given below: