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# ESE 2021 Technical Quiz 37 || MOSFET

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Question 1

Consider an n

^{+}polysilicon-silicon dioxide n-type silicon MOS capacitor. Let N_{d}= 10^{15}cm^{-3}, t_{ox}=, and . What will be the flat-band voltage? IfQuestion 2

The current in an enhancement mode NMOS transistor biased in saturation mode was measured to be 1 mA at a drain-source voltage of 5 V. When the drain-source voltage was increased to 6V while keeping gate-source voltage same, the drain current increased to 1.02 mA. Assume that drain to source saturation voltage is much smaller than the applied drain-source voltage. The channel length modulation parameter (in V

^{–1}) is ____.Question 3

The drain of an n-channel MOSFET is shorted to the gate so that V

_{GS}= V_{DS}. The threshold voltage (V_{T}) of MOSFET is 1V. If the drain current (I_{D}) is 1 mA for V_{GS}= 2V, then for V_{GS}= 3V, I_{D}isQuestion 4

In the three dimensional view of a silicon n-channel MOS transistor shown below. δ = 20 mn. The transistor is of width 1 µm. The depletion width formed at every p-n junction is 10 mn. The relative permittivities of Si and SiO

The gate-source overlap capacitance is approximately

_{2}, respectively, are 11.7 and 3.9. and ε_{0}= 8.9 x 10^{–12}F/m.The gate-source overlap capacitance is approximately

Question 5

In a BJT biased in common emitter configuration given V

Find effective base width of base :

_{CB}= 2 V. Doping in emitter, base & collector are 10 × 10^{17}/ cm^{3}, 5 × 10^{16}/ cm^{3}and 2 × 10^{15}respectively. n_{i}= 1.5 × 10^{10}/ cm^{3}(ε = 11.7εo), the NPN BJT has base width of 0.8 μmFind effective base width of base :

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May 7ESE & GATE EC

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V V Satya Narayana MadasuMember since Sep 2020

Gate Qualified in 2018,2019,2020,2021| ISRO Exam qualified| AIR -672|Completed M.Tech in VLSI Design