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ESE 2021 Technical Quiz 35 || Junction Diodes

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Question 1

A metal-semiconductor junction is taken. The variation of the electric field inside the semiconductor is shown in the figure below

The built-in potential of the diode is _____V.

Question 2

Considersilicon diode at. The slope of the diffusion capacitance versus forward bias current is. The hole lifetime is _______.
(Assume forward bias current)

Question 3

The built-in potential for a silicon p-n junction diode with ND= 1014 cm-3 and NA= 1017 cm-3 for T=300K will be ___V?
(Given intrinsic carrier concentration ni=1.5Description: E:\Gate\Gate-EC\03_Elctro-Devic_B-done_files\image021.png1010 cm3).

Question 4

Consider an abrupt PN junction (at T = 300 K) shown in the figure. The depletion region width Xn on the N-side of the junction is 0.2 μm and the permittivity of silicon si) is 1.044x10-12 F/cm At the junction, the approximate value of the peak electric field (in kV/cm) is _________.

Question 5

Consider an ideal silicon P-N junction diode with the following parameters

The ratio of so that 95% of current in depletion region is carried by electron is
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May 5ESE & GATE EC

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V V Satya Narayana MadasuV V Satya Narayana MadasuMember since Sep 2020
Gate Qualified in 2018,2019,2020,2021| ISRO Exam qualified| AIR -672|Completed M.Tech in VLSI Design
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