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Electronic Devices and Circuits : Nuclear Quiz 3
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Question 1
In a JFET, operating above pinch-off voltage, the
Question 2
The main drawback of a JFET is its:
Question 3
The drain of n-channel MOSFET is shorted to the gate so that VGS = VDS. The threshold voltage (VT) of MOSFET is 1V. If the drain current ID is 1 mA for VGS = 2V, then for VGS = 3V, ID =?
Question 4
Determine the trans-conductance for a JFET at
, if
![](https://gradeup-question-images.grdp.co/liveData/PROJ5536/1509950970235230.png)
![](https://gradeup-question-images.grdp.co/liveData/PROJ5536/1509950971047141.png)
Question 5
An n-channel JFET has a pinch-off voltage VP = –5V, VDS(max) = 20 V and Im = 2mA/V. The minimum ‘on’ resistance is achieved in the JFET for
Question 6
The E-MOSFET is normally-off MOSFET when:
Question 7
If an n-channel E-MOSFET has
and the over drive voltage required to operate the MOSFET in saturation region is 4V, then the drain current produced by the E-MOSFET is
![](https://gradeup-question-images.grdp.co/liveData/PROJ50717/1592287307722986.png)
Question 8
The variation of drain current with gate–to–source voltage (ID – VGS) characteristic of a MOSFET is shown in Fig.Q.16. The MOSFET is
![](https://gs-question-images.grdp.co/1459158437093324.jpg)
Question 9
What percentage of current
is the drain current for a JFET, if the gate-to-source voltage is 70% of the pinch-off voltage?
![](https://gradeup-question-images.grdp.co/liveData/PROJ5536/1509950745477770.png)
Question 10
Find the pinch off voltage of a jFET of Nd = 150 cm-3 and channel half-width 25 cm. The permittivity of the material is 1.5 F/cm.
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Aug 14ESE & GATE EC