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# Electronic Devices and Circuits : Nuclear Quiz 1

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Question 1

In tunnel diode, the Fermi level lies

Question 2

A sample of germanium is made p-type be addition of indium at the rate of one indium atom for every 2.5 × 108 germanium atoms.

Given, ni = 2.5 × 1019 /m3 at 300 K and the number of germanium atoms per m3 = 4.4 × 1028. What is the value of np?

Question 3

The current density of n-type germanium is 100 A/m2 and the resistivity of 0.5–m. If the mobility of electron is 0.4 m2/V-sec. The drift velocity is ………………… m/sec.

Question 4

The average collision time (t) of electrons in a semiconductor is 2.5 × 10–14 sec, then the mobility (m) of electrons will be equal to

(Assume mass of an electron (me) is 9.1 × 10–31 kg

Question 5

The switching speed of a P+N junction (Heavily doped P – region) depends primarily on

Question 6

In a hall experiment, the p – type specimen carrier current in the positive x. direction and the applied magnetic field is in the positive z direction. Then the resultant force on the charge carriers due to magnetic field will be in.

Question 7

Silicon devices can be employed for a higher temperature limit (190 ºC to 200 ºC) as compared to germanium devices (85 ºC to 100 ºC). With respect to this, which of the following is/are not correct?

1) Higher resistivity of silicon at higher temperature

2) Higher gap energy of Germanium compare to silicon

3) Lower intrinsic concentration of silicon with higher temperature

4) Use of silicon devices in high-power applications

Select the correct answer using the code given below:

Question 8

For a p-n junction, considering very long p and n regions, what will be the total number of excess electrons in the p-region?

Question 9

In a p-n junction diode at equilibrium, which one of the following statements is NOT TRUE?

Question 10

The typical value of diffusion constants in a silicon PN-diode are:
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