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DFCCIL EE Power Electronics Quiz - 1

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Question 1

Identify the device which has following characteristics.

1. Fully controlled switch.

2. High ON state voltage drop.

3. High di/dt capability.

4. Low turn ON and turn off gains.

Question 2

Which of the following statements are correct:

1. MOSFET is used for high frequency operation.

2. BJT is used for low to medium frequency operation.

3. MOSFET is a current controlled device.

4. Parallel operation of BJT is not advisable.

Question 3

For an SCR junction and ambient temperature are 390 K and 345 K respectively. Thermal resistance from junction to ambient is 1.5°C/W. Maximum internal power dissipation is _________W.

Question 4

For the circuit shown below latching current is 5 × 10–3 A . To properly turn ON SCR, the minimum width of gating Pulse (in μsec) is:

Question 5

Which of the following statements about power diodes is /are true?

1. Reverse recovery time of last recovery diode is less than Schottky diode.

2. Fast recovery diodes can be made up to higher voltage rating than Schottky diode.

Question 6

Consider the following statements about diodes:

1. Reverse recovery time of Schottky diodes is of the order of nanoseconds.

2. Gold or platinum is doped in the layers of fast recovery diodes of fast recovery diodes.

3. Fast recovery diodes operator faster than Schottky diodes.

Which of the above statements are correct?

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Jun 29AE & JE Exams