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DFCCIL EE/EC EDC QUIZ - 4
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Which of the following is true?
In Avalanche photo diode assume the saturation velocity of the charge carriers generated by impact ionization by photon absorbtion be equal to 107 cm/sec in a depletion region that is 10m wider then the transition time will be
If P is Passivation, Q is n–well implant, R is metallization and S is source/drain diffusion, then the order in which they are carried out in a standard n–well CMOS fabrication process, is
Match List – 1 (Fabrication step in IC) with List – 2 (Related characteristic/Reason) and select the correct answer using the codes given below the lists:
For the circuit shown below, the minimum number and the maximum number of isolation regions are respectively
Photomasking process in IC fabrication:
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Jul 2ESE & GATE EC