DFCCIL EE/EC EDC QUIZ - 4

In Avalanche photo diode assume the saturation velocity of the charge carriers generated by impact ionization by photon absorbtion be equal to 10⁷ cm/sec in a depletion region that is 10m wider then the transition time will be

If P is Passivation, Q is n–well implant, R is metallization and S is source/drain diffusion, then the order in which they are carried out in a standard n–well CMOS fabrication process, is

Match List – 1 (Fabrication step in IC) with List – 2 (Related characteristic/Reason) and select the correct answer using the codes given below the lists:

For the circuit shown below, the minimum number and the maximum number of isolation regions are respectively