Time Left - 08:00 mins


Attempt now to get your rank among 140 students!

Question 1

In a uniformly doped BJT, assume that NE, NB and NC are the emitter, base and collector dopings in atoms/cm3, respectively. If the emitter injection efficiency of the BJT is close unity, which one of the following conditions is TRUE?

Question 2

For an npn BJT transistor, how does the common-emitter current gain β depend on the relative dopings of the base region and the emitter region, NA/ND and the width of base W?

Question 3

In the below circuit assumes that the transistor is in active region. It has a large β and its base-emitter voltage is 0.7V. The value of Ic is__

Question 4

The current in an enhancement mode NMOS transistor biased in saturation mode was measured to be 1 mA at a drain-source voltage of 5 V. When the drain-source voltage was increased to 6V while keeping gate-source voltage same, the drain current increased to 1.02 mA. Assume that drain to source saturation voltage is much smaller than the applied drain-source voltage. The channel length modulation parameter (in V–1) is ____.

Question 5

The drain of an n-channel MOSFET is shorted to the gate so that VGS = VDS . The threshold voltage (VT) of MOSFET is 1V. If the drain current (ID) is 1 mA for VGS = 2V, then for VGS = 3V, ID is

Question 6

In the three dimensional view of a silicon n-channel MOS transistor shown below. δ = 20 mn. The transistor is of width 1 µm. The depletion width formed at every p-n junction is 10 mn. The relative permittivities of Si and SiO2, respectively, are 11.7 and 3.9. and ε0 = 8.9 x 10–12 F/m.

The gate-source overlap capacitance is approximately
  • 140 attempts
  • 1 comment