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DFCCIL EE/EC EDC QUIZ - 3

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Question 1

In a uniformly doped BJT, assume that N_E, N_B and N_C are the emitter, base and collector dopings in atoms/cm³, respectively. If the emitter injection efficiency of the BJT is close unity, which one of the following conditions is TRUE?

Question 2

For an npn BJT transistor, how does the common-emitter current gain β depend on the relative dopings of the base region and the emitter region, N_A/N_D and the width of base W?

Question 3

In the below circuit assumes that the transistor is in active region. It has a large β and its base-emitter voltage is 0.7V. The value of I_c is__

Question 4

The current in an enhancement mode NMOS transistor biased in saturation mode was measured to be 1 mA at a drain-source voltage of 5 V. When the drain-source voltage was increased to 6V while keeping gate-source voltage same, the drain current increased to 1.02 mA. Assume that drain to source saturation voltage is much smaller than the applied drain-source voltage. The channel length modulation parameter

(in V^–1) is ____.

Question 5

The drain of an n-channel MOSFET is shorted to the gate so that V_GS = V_DS . The threshold voltage (V_T) of MOSFET is 1V. If the drain current (I_D) is 1 mA for V_GS = 2V, then for V_GS = 3V, I_D is

Question 6

In the three dimensional view of a silicon n-channel MOS transistor shown below. δ = 20 mn. The transistor is of width 1 µm. The depletion width formed at every p-n junction is 10 mn. The relative permittivities of Si and SiO₂, respectively, are 11.7 and 3.9. and ε₀ = 8.9 x 10^–12 F/m.

The gate-source overlap capacitance is approximately

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ESE & GATE EC Electronic Devices and Circuits

Jul 1ESE & GATE EC