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DFCCIL EE/EC EDC QUIZ - 2

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Question 1

A metal-semiconductor junction is taken. The variation of the electric field inside the semiconductor is shown in the figure below

The built-in potential of the diode is _____V.

Question 2

Consider

silicon diode at

. The slope of the diffusion capacitance versus forward bias current is

. The hole lifetime is _______

.
(Assume forward bias current

)

Question 3

The built-in potential for a silicon p-n junction diode with N_D= 10¹⁴ cm^-3 and N_A= 10¹⁷ cm^-3 for T=300K will be ___V?
(Given intrinsic carrier concentration n_i=1.5 $Description: E:\Gate\Gate-EC\03_Elctro-Devic_B-done_files\image021.png$ 10¹⁰ cm³).

Question 4

Consider an abrupt PN junction (at T = 300 K) shown in the figure. The depletion region width X_n on the N-side of the junction is 0.2 μm and the permittivity of silicon (ε_si) is 1.044x10^-12 F/cm At the junction, the approximate value of the peak electric field (in kV/cm) is _________.

Question 5

Consider an ideal silicon P-N junction diode with the following parameters

The ratio of

so that 95% of current in depletion region is carried by electron is

Question 6

A particular green LED emits light of wavelength 5490^oA. The energy band gap of the semiconductor material used there is (Planck’s constant = 6.625x10^-34 J-s.)

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ESE & GATE EC Electronic Devices and Circuits

Jun 30ESE & GATE EC