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# DFCCIL EE Basic Electronics Quiz-1

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Question 1

The resistivity of a uniformly doped n-type silicon sample is 0.5 Ω-cm. If the electron mobility (μn) is 1250 cm2/V-sec and the charge of an electron is 1.6 × 10–19 Coulomb, the donor impurity concentration (ND) in the sample is

Question 2

Which of the following semi-conductor parameters vary with temperature?
i) Intrinsic concentration (ηi)
ii) Mobility (μ)
iii) Conductivity (σ)
iv) Energy gap (EG)

Question 3

An intrinsic semiconductor bar of Si is doped with donor type impurity to the extent of 1 atom per 108 silicon atoms, then the resistivity of silicon crystal will be
(atomic density of Si crystals = 5 x 1022 atoms/cm3 and μn = 1300 cm2N-sec)

Question 4

Assume electronic charge and electron mobility If the concentration gradient of electrons injected into a P-type silicon sample is the magnitude of electron diffusion current density (in A/cm2) is _________.

Question 5

A semiconductor having electron mobility, hole mobility, intrinsic carrier concentration as is kept at 300 ° K. The maximum value of resistivity is _________ Ω-m.

Question 6

A semiconductor sample at room temperature has intrinsic concentration of 2.5 X 1017 /m3. After doping what will be the minority carrier concentration if the majority carrier concentration is given as 5.5 X 1021 /m3.
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