GATE 2024 EDC Foundation Quiz 21

The resistivity of a certain specimen (doped semi-conductor) is 7.86 x 10^-3Ω-m, and the hall co-efficient of the same specimen is 2.83 x 10^-4 m³c^-1. Now determine the majority carrier mobility in cm²V^-1S^-1 unit.

In an ideal silicon junction diode :

,

.

Then the ratio of so that 80in depletion region is carried by electrons is _____

In a uniformly doped BJT, assume that N_E, N_B and N_C are the emitter, base and collector doping in atoms/cm³, respectively. If the emitter injection efficiency of the BJT is close to unity, which one of the following condition is true

The data sheet for an EMOSFET operating in saturation region gives
I_{D (on)} = 450mA, V_GS = 12V, V_th = 2V,

The drain current for V_GS = 6V is _______mA

If the efficiency of photodetector is 100% for the incident light with 50μm wavelength. Then the responsivity (in A/W) of photo detector is