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GATE 2024 EDC Foundation Quiz 18

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Question 1

A silicon epitaxial npn (BJT) transistor is fabricated with a base doping of N_B = 3 × 10¹⁶/cm³ and heavily doped collector region with N_C = 5 × 10¹⁷/cm³. The neutral base width is x_B = 0.5 μm. When V_BE = V_BC = 0. The V_BC at punch through is

Question 2

The common emitter current gain of the transistor given in the circuit below is β = 75. The voltage V_EB in ON state is 0.7 V. The value of collector emitter voltage V_CE (in Volts is?

Question 3

For an npn BJT transistor, how does the common-emitter current gain β depend on the relative dopings of the base region and the emitter region, N_A/N_D and the width of base W?

Question 4

An npn bipolar junction transistor (BJT) is operating in the active region. If the reverse bias across the base – collector junction is increased, then

Question 5

In a uniformly doped BJT, assume that N_E, N_B and N_C are the emitter, base and collector doping in atoms/cm³, respectively. If the emitter injection efficiency of the BJT is close to unity, which one of the following condition is true

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ESE & GATE EC Electronic Devices and Circuits

Mar 30ESE & GATE EC