GATE 2023 EDC Rank Booster Quiz 19

If a n-channel enhancement MOSFET is biased in common source such that its gate to source voltage V_GS = 1 V, drain to source voltage V_DS = 3 V, drain current I_D=2mA, μ_n C_ox (W/L) = 0.5mA/V² and V_T = 1V  The value of drain conductance is _________ .
(Neglecting channel length modulation).

The data sheet for an EMOSFET operating in saturation region gives
I_{D (on)} = 450mA, V_GS = 12V, V_th = 2V,

The drain current for V_GS = 6V is _______mA

Consider the circuit shown in figure and each of the given transistors have the following parameters

V_TN = 0.8V, k_n (μ_n C_ox ) = 30 μA/ V²

If the ratios of width to length i.e. , then V₀ is ______(Volts)

The transistor given in the circuit below has V_TN = 2V and (μ_n C_ox W)/2L =0.1 mA/V². The power dissipated in the transistor is equal to _________mW.

In an n-channel MOSFET , drain is shorted to the gate so that V_GS = V_DS.  And V_T =1V. If the drain current I_D is 1 mA for V_GS =2V then for V_GS =3V, I_D  (in mA) is

An n-channel enhancement mode MOSFET is biased at V_GS>V_TH and, V_DS>(V_GS-V_TH), where V_GSis the gate-to-source voltage, V_DS is the drain-to-source voltage and V_TH is the threshold voltage. Considering channel length modulation effect to be significant, the MOSFET behaves like a