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BARC EE : Analog Electronics Quiz-3

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Question 1

The circuit in Figure is a
Description: D:\GradeStack Courses\GATE Tests (Sent by Ravi)\GATE EC-ME-17-Mar\GATE-ECE-2004_files\image033.jpg

Question 2

The stability factor ‘S’ in BJT.

Question 3

For the circuit shown below, assume that the OPAMP is ideal.

Which one of the following is TRUE?

Question 4

The two transistors in circuit shown below are identical. If β = 25, then the value of current will be



Question 5

In a MOSFET operating in the saturation region, the channel length modulation effect causes

Question 6

Which statement is correct in case of ideal OPAMP?

Question 7

Consider the following statements:

1) A current mirror can be used as active load because it has low output AC resistance.

2) The gain of practical op-amp at high frequencies is less as compared to that of at medium frequencies.

3) In self bias circuit for CE amplifier, the base voltage is equal to supply voltage.

Which of the above statements are incorrect?

Question 8

In the circuit of fig. the transistor parameters are VTN =1.7V and Kn= 0.4mA/V2.

If  then the value of resistor and are respectively :-

Question 9

Assuming that the opamp in the circuit shown below is ideal, the output voltage V0 (in volts) is______

Question 10

If an npn-silicon transistor transistor is operated at VCE = 5 V and IC = 100 μA and has a current gain of 100 in the CE connection, then the input resistance of this circuit will be.
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Jul 4ESE & GATE EE