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# GATE SUBJECT REVISION QUIZ

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Question 1

A sequence generator generates a sequence 1011110. How many flip-flops apart from the flip-flop from which the output is taken, are required to generate this sequence?

Question 2

Consider the circuit shown in the figure below: Let the forward voltage drop V for the diode. The circuit is connected with two power supplies with values V1 = 10 V and V2 = 15 V, then the value of current passing through the diode D is equal ______ mA.

Question 3

A weighted resistor type digital to analog converter is designed as shown in the figure below. The input voltage is equal to 0 V for logic input ‘0’ and is equal to 5 V for logic input ‘1’. If the resolution of the digital to analog converter is equal to –0.3 V, then the value of RF (in Ω) is equal to Question 4

If a characteristics equation has roots then the values of natural frequency and damping ratio will be respectively.

Question 5

Transfer function of an LTI system is given as . Find the gain of the system at a frequency of .

Question 6

From which of the following is the Boolean expression of a most significant bit of digital circuit which can converts BCD (in binary) to its 9's complement format (in binary), consider the given circuit as shown in figure to identity the input and output variables Question 7

Consider the 2 port circuit given below Hybrid parameter h12 for the circuit is _____.

Question 8 If both the transistor are operating in linear region and perfectly matched with
β, IE1 = IE2 and VT = 25 mV, then voltage gain will be ___________.

Question 9

Consider the following assembly language program of 8085 microprocessor, which is intended to transfer a block of 5 bytes from A000H to 9000H:

START : LXIB, 9000H

LXIH, A000H

MVIC, 05H

LOOP : MOV A, M

STAX B

INX B

INX H

DCR C

JNZ LOOP

HLT

The above program will not serve the purpose for which it is intended, because

Question 10

Find the output of the given circuit If A+B=Y. Question 11

A silicon bar is doped with arsenic atoms / . The equilibrium hole concentration at 300 k and the location of the Fermi level ( ) of sample relative to intrinsic Fermi level ( ) are _____

( )

Question 12

Figure shown below is a plot of the steady state carrier concentration inside a p-n junction maintained at room temperature. What is the condition of the diode?

Question 13

Calculate value of RL so that maximum power is transmitted through RL
Also calculate maximum power generated. Question 14

Consider an MOS structure with n-type silicon. A metal- semiconductor work function difference of Φms = - 0.35 V is required. For an aluminium- silicon dioxide junction, Φm = 3.20 V and for a silicon-silicon dioxide junction x′ = 3.25 V and Eg = 1.11 eV. If the gate is aluminium, then what is the silicon doping required to meet the specification?

Question 15

For the given circuit, the initial current through the inductor is i(0) =12A, then find the current for all ? • 235 attempts
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