If a n-channel enhancement MOSFET is biased in common source such that its gate to source voltage VGS = 1 V, drain to source voltage VDS = 3 V, drain current ID=2mA, μn Cox (W/L) = 0.5mA/V2 and VT = 1V The value of drain conductance is _________ . (Neglecting channel length modulation).
The data sheet for an EMOSFET operating in saturation region gives ID (on) = 450mA, VGS = 12V, Vth = 2V,
The drain current for VGS = 6V is _______mA
Consider the circuit shown in figure and each of the given transistors have the following parameters
VTN = 0.8V, kn (μn Cox ) = 30 μA/ V2
If the ratios of width to length i.e. , then V0 is ______(Volts)
The transistor given in the circuit below has VTN
= 2V and (μn
W)/2L =0.1 mA/V2. The power d
issipated in the transistor is equal to _________mW.
A depletion type N-channel MOSFET is biased in its linear region for use as a voltage controlled resistor. Assume threshold voltage VTH = -0.5 V, VGS = 2.0 V, VDS = 5 V, W/L = 100, Cox = 10-8 F/cm2 and µn = 800 cm2/V-s. The value of the resistance of the voltage controlled resistor (in Ω) is __________.
In an n-channel MOSFET , drain is shorted to the gate so that VGS = VDS. And VT =1V. If the drain current ID is 1 mA for VGS =2V then for VGS =3V, ID (in mA) is