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GATE EC 2022: Electronic Devices Quiz 5

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Question 1

In a uniformly doped BJT, assume that NE, NB and NC are the emitter, base and collector dopings in atoms/cm3, respectively. If the emitter injection efficiency of the BJT is close unity, which one of the following conditions is TRUE?

Question 2

For an npn BJT transistor, how does the common-emitter current gain β depend on the relative dopings of the base region and the emitter region, NA/ND and the width of base W?

Question 3

in the circuit shown, the silicon BJT has β = 50, assume VBE = 0.7 V and VCE(sat) = 0.2 V , which one of the following statement is correct ?

Question 4

For the below BJT which of the following is true, for amplification process where BVCB = Breakdown voltage in CB configuration

Question 5

In the circuit shown in the figure, the BJT has a current gain (β) of 50. For an emitter-base voltage VEB = 600 mV, the emitter-collector voltage VEC (in Volts) is _____.
Description: D:\GradeStack Courses\GATE Tests (Sent by Ravi)\GATE EC 10-Mar\GATE-ECE-2015-Paper-3_files\image033.jpg

Question 6

In a BJT biased in common emitter configuration given VCB = 2 V. Doping in emitter, base & collector are 10 × 1017 / cm3, 5 × 1016 / cm3 and 2 × 1015 respectively. ni = 1.5 × 1010 / cm3 (ε = 11.7εo), the NPN BJT has base width of 0.8 μm
Find effective base width of base :
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Sep 3ESE & GATE EC

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Mayank SoniMayank SoniMember since Mar 2021
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