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GATE EC 2022: Electronic Devices Quiz 4

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Question 1

A metal-semiconductor junction is taken. The variation of the electric field inside the semiconductor is shown in the figure below

The built-in potential of the diode is _____V.

Question 2

Considersilicon diode at. The slope of the diffusion capacitance versus forward bias current is. The hole lifetime is _______.
(Assume forward bias current)

Question 3

The built-in potential for a silicon p-n junction diode with ND= 1014 cm-3 and NA= 1017 cm-3 for T=300K will be ___V?
(Given intrinsic carrier concentration ni=1.5Description: E:\Gate\Gate-EC\03_Elctro-Devic_B-done_files\image021.png1010 cm3).

Question 4

Consider an abrupt PN junction (at T = 300 K) shown in the figure. The depletion region width Xn on the N-side of the junction is 0.2 μm and the permittivity of silicon si) is 1.044x10-12 F/cm At the junction, the approximate value of the peak electric field (in kV/cm) is _________.

Question 5

Consider an ideal silicon P-N junction diode with the following parameters

The ratio of so that 95% of current in depletion region is carried by electron is

Question 6

The transition Capacitance of a step graded Si p-n junction diode is 20PF at a reverse bias voltage of 5V , and if reverse bias voltage is increased by 1 v , then the change in capacitance is ______(pF)
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Aug 2ESE & GATE EC

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Mayank SoniMayank SoniMember since Mar 2021
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