Time Left - 15:00 mins

# GATE EC 2022: Electronic Devices Quiz 2

Attempt now to get your rank among 244 students!

Question 1

A specimen of a Si has a resistivity of 200 k-cm , magnetic flux B=0.3 Wb/m

^{2}and d=w=6mm. if the value of hall voltages and hall currents are 60mV and 10 . Then the value of is ______(-sec)Question 2

A semiconductor sample at room temperature has intrinsic concentration of 2.5 X 10

^{17}/m^{3}. After doping what will be the minority carrier concentration if the majority carrier concentration is given as 5.5 X 10^{21}/m^{3}.Question 3

Two exactly same semiconductors formed from materials having bandgap of1.1 eV and 0.7 eV are taken.Then the ratio of intrinsic carrier concentration Of the first semiconductor to the second one will be _____ 10

^{-3}(assuming kT=0.026 eV).Question 4

Silicon is doped with boron to a concentration of 4×10^{17} atoms/cm^{3}. Assuming the intrinsic carrier concentration of silicon to be 1.5×10^{10}/cm^{3} and the value of to be 25 mV at 300 K

Compared to undoped silicon, the Fermi level of doped silicon?

Question 5

The resistivity of a certain specimen (doped semi-conductor) is 7.86 x 10

^{-3}Ω-m, and the hall co-efficient of the same specimen is 2.83 x 10^{-4}m^{3}c^{-1}. Now determine the majority carrier mobility in cm^{2}V^{-1}S^{-1}unit.Question 6

The effective masses of electron and hole in germanium are m

_{n}= 0.55m_{O}and m_{p}= 0.37m_{O}respectively, then the energy difference between mid-band level and intrinsic Fermi level at 300 K in Ge is- 244 attempts
- 1 upvote
- 2 comments

Aug 31ESE & GATE EC

Posted by: