GATE EC 2022: EDC Quiz 9
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Question 1
Question 2
Direction: Consider the impurity doping profile in a silicon pn junction as shown in figure. Assume that zero voltage is applied to the pn junction. (For Si, relative permittivity is ϵr = 11.7)
Question 3
Direction: Consider the impurity doping profile in a silicon pn junction as shown in figure. Assume that zero voltage is applied to the pn junction. (For Si, relative permittivity is ϵr = 11.7)
Question 4
In a silicon semiconductor material at T = 300 K, the doping concentrations are Nd = 1015 cm-3 and Na = 0. The equilibrium recombination rate is Rp0 = 1011 cm-3 –s-1. A uniform generation rate produces an excess-carrier concentration of δn = δp = 1014 cm-3.
Question 5
In a silicon semiconductor material at T = 300 K, the doping concentrations are Nd = 1015 cm-3 and Na = 0. The equilibrium recombination rate is Rp0 = 1011 cm-3 –s-1. A uniform generation rate produces an excess-carrier concentration of δn = δp = 1014 cm-3.
Question 6
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