Time Left - 15:00 mins

GATE EC 2022: EDC Quiz 9

Attempt now to get your rank among 206 students!

Question 1

An npn bipolar junction transistor (BJT) is operating in the active region. If the reverse bias across the base – collector junction is increased, then

Question 2

Direction: Consider the impurity doping profile in a silicon pn junction as shown in figure. Assume that zero voltage is applied to the pn junction. (For Si, relative permittivity is ϵr = 11.7)

The built-in potential barrier, Vbi, is

Question 3

Direction: Consider the impurity doping profile in a silicon pn junction as shown in figure. Assume that zero voltage is applied to the pn junction. (For Si, relative permittivity is ϵr = 11.7)

What will be the distances xn and xp that the space charge region extends into the n and p-regions respectively (in μm)?

Question 4

In a silicon semiconductor material at T = 300 K, the doping concentrations are Nd = 1015 cm-3 and Na = 0. The equilibrium recombination rate is Rp0 = 1011 cm-3 –s-1. A uniform generation rate produces an excess-carrier concentration of δn = δp = 1014 cm-3.

...Read More
The excess-carrier lifetime is _ _ _ _ _× 10-7 s.

Question 5

In a silicon semiconductor material at T = 300 K, the doping concentrations are Nd = 1015 cm-3 and Na = 0. The equilibrium recombination rate is Rp0 = 1011 cm-3 –s-1. A uniform generation rate produces an excess-carrier concentration of δn = δp = 1014 cm-3.

...Read More
By _ _ _ _ _× 109 factor does the total recombination rate increase ?

Question 6

The parameters in the base region of an npn bipolar transistor are Dn = 20 cm2/s, nB0 = 104 cm-3, xB = 1 μm, ABE = 10-4 cm2. What will be the collector current (in μA) for VBE = 0.5 V?
  • 206 attempts
  • 0 upvotes
  • 0 comments
Jul 7ESE & GATE EC

Posted by:

V V Satya Narayana MadasuV V Satya Narayana MadasuMember since Sep 2020
Gate Qualified in 2018,2019,2020,2021| ISRO Exam qualified| AIR -672|Completed M.Tech in VLSI Design
Share this quiz   |