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GATE EC 2022: EDC Quiz 10

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Question 1

In a transistor 98.6 % of the carriers injected into the base cross the collector-base junction. If the leakage current is 6μA and collector current is 18 mA. Then the emitter current(in mA) is

Question 2

Which of the following statements concerning IC fabrication is not correct?

Question 3

Assuming VCEsat = 0.2 V and β = 50, the minimum base current (IB) required to drive the transistor in figure to saturation is?

Question 4

Two GaAs wafers, one n-type and one p-type, are uniformly doped such that ND (wafer 1) = NA (wafer 2) ≥ ni , which wafer will exhibit the larger resistivity?

Question 5

A silicon diode, with NA=1017 cm-3 and ND = 5 × 1017 cm-3 , is forward biased with Va = 0.05 V. Assume that the intrinsic concentration of silicon is ni = 1.08 ×1010 cm-3. What are the minority carrier concentrations ∆np(xp) and ∆ pn(xn) at the edge of transition region?

Question 6

The electron concentration in a sample of uniformly doped n-type silicon at 300 K varies linearly from 1017/cm3 to at x = 0 to 6 × 1016 /cm3 at x = 2 µm. Assume a situation that electrons are supplied to keep this concentration gradient constant with time. If the electronic charge is 1.6 × 10-19 coulomb and the diffusion constant Dn = 35 cm2/s, the current density in the silicon if no electric field is present?
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V V Satya Narayana MadasuV V Satya Narayana MadasuMember since Sep 2020
Gate Qualified in 2018,2019,2020,2021| ISRO Exam qualified| AIR -672|Completed M.Tech in VLSI Design
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