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GATE EC 2022: EDC Quiz 10
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In a transistor 98.6 % of the carriers injected into the base cross the collector-base junction. If the leakage current is 6μA and collector current is 18 mA. Then the emitter current(in mA) is
Which of the following statements concerning IC fabrication is not correct?
Assuming VCEsat = 0.2 V and β = 50, the minimum base current (IB) required to drive the transistor in figure to saturation is?
Two GaAs wafers, one n-type and one p-type, are uniformly doped such that ND (wafer 1) = NA (wafer 2) ≥ ni , which wafer will exhibit the larger resistivity?
A silicon diode, with NA=1017 cm-3 and ND = 5 × 1017 cm-3 , is forward biased with Va = 0.05 V. Assume that the intrinsic concentration of silicon is ni = 1.08 ×1010 cm-3. What are the minority carrier concentrations ∆np(xp) and ∆ pn(xn) at the edge of transition region?
The electron concentration in a sample of uniformly doped n-type silicon at 300 K varies linearly from 1017/cm3 to at x = 0 to 6 × 1016 /cm3 at x = 2 µm. Assume a situation that electrons are supplied to keep this concentration gradient constant with time. If the electronic charge is 1.6 × 10-19 coulomb and the diffusion constant Dn = 35 cm2/s, the current density in the silicon if no electric field is present?
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Jul 15ESE & GATE EC
V V Satya Narayana MadasuMember since Sep 2020Gate Qualified in 2018,2019,2020,2021| ISRO Exam qualified| AIR -672|Completed M.Tech in VLSI Design