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GATE EC 2022: EDC Quiz 1 (App update required to attempt this test)

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Question 1

The resistivity of a uniformly doped n-type silicon sample is 0.5 Ω-cm. If the electron mobility (μn) is 1250 cm2/V-sec and the charge of an electron is 1.6 × 10–19 Coulomb, the donor impurity concentration (ND) in the sample is

Question 2

Which of the following semi-conductor parameters vary with temperature?
i) Intrinsic concentration (ηi)
ii) Mobility (μ)
iii) Conductivity (σ)
iv) Energy gap (EG)

Question 3

An intrinsic semiconductor bar of Si is doped with donor type impurity to the extent of 1 atom per 108 silicon atoms, then the resistivity of silicon crystal will be
(atomic density of Si crystals = 5 x 1022 atoms/cm3 and μn = 1300 cm2N-sec)

Question 4

Assume electronic charge and electron mobility If the concentration gradient of electrons injected into a P-type silicon sample is the magnitude of electron diffusion current density (in A/cm2) is _________.

Question 5

The figure below shows the doping distribution in a p-type semiconductor in log scale.

The magnitude of the electric field (in kV/cm) in the semiconductor due to non uniform doping is

Question 6

A semiconductor having electron mobility, hole mobility, intrinsic carrier concentration as is kept at 300 ° K. The maximum value of resistivity is _________ Ω-m.
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V V Satya Narayana MadasuV V Satya Narayana MadasuMember since Sep 2020
Gate Qualified in 2018,2019,2020,2021| ISRO Exam qualified| AIR -672|Completed M.Tech in VLSI Design
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