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GATE 2024 Power Electronics Foundation Quiz 48

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Question 1

Statement I: All switching devices experience secondary breakdown.

Statement II: Due to negative thermal coefficient of BJT, thermal away takes place and secondary Breakdown occurs.

Question 2

A power diode has a forward characteristic which is represented by V_f = 0.79 + 0.02 I_f. Calculate the average power loss for a constant current of 100 A for 1/3 of a cycle ?

Question 3

Consider the following figure of Safe Operating Area of MOSFET.

A- Current limit-AB
B- Voltage Limit-CD
C- Current limit-CD
D- Voltage limit-AB
E- Power dissipation limit-BC
F- Heat developed limit-BC
Which of the following is correctly matched?

Question 4

For a power diode, the rate of diode current decay is 100 A/µsec and the reverse recovery time is 3.9 µsec. For a softness factor of 0.3, the storage charge in power diode is

Question 5

A silicon power diode with a break down voltage of 2000 V that is conducting a forward current of 2000 A is turned off with a constant

, then approximate time required to turn off the diode is

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ESE & GATE EE Power Electronics

Jun 1ESE & GATE EE