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GATE 2024 EDC Foundation Quiz 19

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Question 1

μ_n C_OX W/L = 0.2 mA/V² V_Th = 2V find V_o.

Question 2

A depletion type N-channel MOSFET is biased in linear region for use as a voltage controlled resistor. At V_GS = 4 V, the drain to source resistance (r_ds) found to be 1KΩ, if V_GS is increased to 6 V, then the value of r_ds is _________ KΩ. (Assume, Threshold voltage, V_Th = –1 V, the value of V_DS to be very small )

Question 3

An n-channel enhancement mode MOSFET is biased at V_GS>V_THand, V_DS>(V_GS-V_TH), where V_GSis the gate-to-source voltage, V_DSis the drain-to-source voltage and V_THis the threshold voltage. Considering channel length modulation effect to be significant, the MOSFET behaves like a

Question 4

The data sheet for an EMOSFET operating in saturation region gives
I_{D (on)}= 450mA, V_GS= 12V, V_th= 2V,

The drain current for V_GS= 6V is _______mA

Question 5

Given V_gs is the gate-source voltage, V_ds is the drain voltage, and V_th is threshold voltage of an enhancement type NMOS transistor, the conditions for transistor to be biased in saturation are

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ESE & GATE EC Electronic Devices and Circuits

Jul 28ESE & GATE EC