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GATE 2024 EDC Foundation Quiz 17
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Question 1
The diffusion capacitance in a certain diode is found to be 0.5 μF at 3.4 v forward bias voltage then the diffusion capacitance at the 3.5 v forward bias voltage will be________ μF.
Question 2
In a silicon p-n junction diode with large forward bias current is dominated by
Question 3
For a p-n junction diode the doping concentration on the n-side is ND = 1015 cm-3 and the doping concentration on the p-side is NA = 1014 cm-3. The intrinsic carrier concentration of material used to form the diode is 1012 cm-3. The built in potential of the diode is
(Assume VT = 25 mV)
(Assume VT = 25 mV)
Question 4
In an ideal silicon junction diode :
,
.
Then the ratio of so that 80in depletion region is carried by electrons is _____
Question 5
The transition Capacitance of a step graded Si p-n junction diode is 20PF at a reverse bias voltage of 5V , and if reverse bias voltage is increased by 1 v , then the change in capacitance is ______(pF)
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