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GATE 2024 EDC Foundation Quiz 16
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Question 1
A specimen of Si has resistivity of 300kΩ –cm, magnetic flux B = 0.1 wb/m2& d = w = 6 mm
The measured hall voltage& currents are 60mV & 10μA
What is μp? ________ cm2/v–sec
Question 2
If a semiconductor has an intrinsic carrier concentration of 1.41 x 1016/m3, when doped with 1021/m3 phosphorous atoms, then the concentration of holes/m3 at room temperature will be
Question 3
An intrinsic semiconductor with energy gap 1 eV has a carrier concentration N at temperature 200 K. Another intrinsic semiconductor has the same value of carrier concentration N at temperature 600 K. What is the energy gap value for the second semiconductor?
Question 4
The resistivity of a certain specimen (doped semi-conductor) is 7.86 x 10-3Ω-m, and the hall co-efficient of the same specimen is 2.83 x 10-4 m3c-1. Now determine the majority carrier mobility in cm2V-1S-1 unit.
Question 5
Silicon is doped with boron to a concentration of 5 1019 atoms/cm3. Assume the intrinsic carrier concentration of silicon to be 1.5 1010 /cm3 and the value of kT/q to be 25 mV at 300 ⁰k. Compared to undoped silicon, the fermi level of doped silicon
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Mar 28ESE & GATE EC