GATE 2023 EDC Quiz 71

A low level injected silicon sample is doped with 5 × 10¹⁵ cm^–3 donors. If excess carrier concentration is 3 × 10¹⁴ cm^–3 then find the no of holes of electrons________

An ideal MOS capacitor with an aluminium gate has a silicon dioxide thickness of t_ox =400 Å on a p-type silicon substrate doped with an acceptor concentration of N_a = 10¹⁶ cm^-3. The flat-band capacitance, C′_FB will be ___________.

Choose the correct answer for the given low-frequency capacitance versus gate voltage characteristics of MOS-capacitor.

A MOS capacitor fabricated on a p-type semiconductor, strong inversion occur when,

Which of the MOSFET exhibits current at zero gate voltage.

The MOSFET circuit shown below uses a MOSFET with the indicated characteristics.

which is the following statement is correct.

(i) MOSFET is in saturation region if gate voltage V_G is 4.0V.

(ii) MOSFET is in Linear region if gate Voltage is 3.0V.

(iii) MOSFET is in cut off region if gate Voltage is 4.5V