GATE 2023 EDC Quiz 20

A Silicon photodiode has a dark current of 1.2 nA and is being used as a detector under reverse bias of 2 V. the photodiode has a responsivity of 0.6 A/W. The photodiode is illuminated under optical power level of 2 μW with photons having energy 1.4*10^-19 Joules. What is the photocurrent generated(in nA) ?

A 0.46 thick sample of GaAs is illuminated with monochromatic light of 2 eV energy. The absorption coefficient is.The power incident on sample is 10 mW. Then the rate of excess thermal energy given up by electrons to the lattice before recombination is ______(mJ/s).

A solar cell has short circuit current of 180mA, and open circuit voltage of 0.5 Volt, junction area is 3 cm². And fill factor is 0.7 If it is illuminated uniformly with light if power 100 mW/cm². then the maximum conversion efficiency is given as _______(percentage)

In a photo diode, the width of the depletion layer W is 1 mm_, generation rate of excess carriers is 10²⁰ cm^–3 sec^–1. The diffusion length of electrons and holes are 20 mm and 10 mm respectively. Then the steady state photo current density of the photo diode is __ in mA / cm²

Determine temperature coefficient of 5V Zener diode (rated 25°C value). If the nominal voltage drops to 4.8V at temperature of 100°C _____________________ mv/°C