A Ge diode is operated at a formed current of 10mA with VD = 0.3V. If VD = 0.4V, find formed current in mA
(Assume, VT = 0.02587)
Assume that mobility of electrons in silicon at T=300 K is μn =1300 cm2 /V-sec. Also assume that the mobility is limited by thermal motion of atoms and varies with temperature. Then the electron mobility (in cm2/V-sec) at T = 400K is (approximate value)
The minority carrier hole diffusion coefficient is D p = 12cm2/s and majority carrier electron diffusion coefficient is D n = 48 cm2/s. If the sum of electron and hole mobility is 100 cm2/V-sec, then electron mobility is _____ (cm2/V-sec)
Figure shown below is a plot of the steady state carrier concentration inside a p-n junction maintained at room temperature. What is the condition of the diode?
An ideal one-sided silicon n+p junction has uniform doping on both sides of the abrupt junction. The doping relation is The built-in potential barrier is . The applied reverse bias voltage is .The space charge width is:- (ni= 1.5 x 1010 cm-3,εr=11.7)
An ideal MOS capacitor has a p–type substrate with a doping concentration of 1016 cm–3 Boron atoms / cm3. If a positive DC gate voltage is applied, then the maximum width of space charge region that can exist in the substrate is ________ mm.
(Assume, eSi = 1.04 × 10–12 F /cm, kT/q = 26 mV and ni = 1.5 × 1010 cm–3)
A semiconductor of thickness 0.5 is illuminated with monochromatic light of , and the absorption coefficient of semiconductor ,. If the incident power is 10mW ( Assume semiconductor has perfect quantum efficiency )then number of photons given from recombination events per second is ____()
Figure shows the high-frequency capacitance-voltage (c–v) characteristics of a mos capacitor. Oxide thickness fox is 1.8 m.
Assume that the permittivity’s of silicon and sio2 are 10–12F/cm and 3.5×10–13 F/cm respectively.
Then maximum value of width of depletion region in the substrate is____m.